Reza Electronics launched a new gate drive IC for driving IGBT and SiC MOSFET of EV inverter

Reza Electronics, a global semiconductor solution provider, announced today that it will launch a new grid drive IC - RAJ2930004AGM, which is used to drive high-voltage power devices such as IGBT (insulated gate bipolar transistor) and SiC (silicon carbide) MOSFET for electric vehicle (EV) inverters.

As an important part of the electric vehicle inverter, the grid drive IC provides an interface between the inverter control MCU and the IGBT and SiC MOSFET that supply power to the inverter. They receive control signals from MCU in the low voltage domain and transmit these signals to the high voltage domain to quickly turn on and off power devices. In order to adapt to the higher voltage of electric vehicle battery, RAJ2930004AGM has a built-in 3.75kVrms (kV root mean square) isolator, which is higher than the 2.5kVrms isolator of the previous generation product, and can support power devices with withstand voltage up to 1200V. In addition, the new drive IC has 150V/ns (nanosecond) or higher CMTI (Common Mode Transient Immunity) performance, which brings reliable communication and stronger anti-noise capability while meeting the high voltage and fast switching speed required by the inverter system. The new product realizes the basic functions of the gate driver in the small SOIC16 package, making it an ideal choice for low-cost converter systems.

RAJ2930004AGM can be used together with Reza IGBT products and other manufacturers' IGBT and SiC MOSFET devices. In addition to the traction inverter, the grid driver IC is also very suitable for various applications using power semiconductors, such as on-board charger and DC/DC converter. In order to help developers rapidly push their products to the market, Ruisa launched the xEV inverter kit solution, which combines the grid drive IC with MCU, IGBT and power management IC, and plans to release the version containing the new grid drive IC in the first half of 2023.

Da Dao Zhao, vice president of the specific business department of the simulation application of Reisa Electronics, said: "Reisa is pleased to launch the second generation grid drive IC with high isolation voltage and excellent CMTI performance for on-board applications. We will continue to promote the application development for electric vehicles, and create solutions that can reduce power loss and meet the high-level functional safety of user systems."

Key characteristics of RAJ2930004AGM gate drive IC

Isolation capability

• Withstand isolation voltage: 3.75kVrms

• CMTI (common mode transient immunity): 150V/ns

Grid drive capability

• Output peak current: 10A

• Protection/fault detection function

• On-chip active Miller clamping

• Soft shutdown

• Overcurrent protection (DESAT protection)

• Under voltage lockout (UVLO)

• Fault feedback

Operating temperature range

• - 40 to 125 ° C (Tj: up to 150 ° C)

This product will promote the adoption rate of electric vehicles by realizing cost-effective inverters, thus minimizing the impact on the environment.

Supply information

RAJ2930004AGM gate drive IC can now provide samples and is planned to be mass produced in the first quarter of 2024.